Piezoelectric Accelerometers with Integral Electronics by Felix Levinzon

Author:Felix Levinzon
Language: eng
Format: epub
Publisher: Springer International Publishing, Cham

(4.12)

In (4.12), V gs(off) is the gate-source cutoff voltage.

4.2.2 Thermal Noise Caused by the Load Resistance

The load resistance R l thermal noise contribution as the FET equivalent input noise voltage spectral density is given by

(4.13)

To make this noise contribution negligible, <10 % of the channel thermal noise , defined by (4.11) and Γ = 2/3, it is needed to provide , or FET voltage gain G = g fs R l  > 15.

4.2.3 Thermal Noise Caused by the Biasing Resistor

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